Identification of Defects in Semiconductors

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Arrows show the effect of V N coupled with cation vacancies.

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The x values for the sample are shown. The dotted lines connecting the S , W values for DF and cation vacancies show the effect of the trapping of positrons by the cation vacancies in ordered In 0. The experimental data obtained for V Zn are shown for comparison. Figure 26 Example of average positron lifetime measured with time-modulated illumination in a natural diamond sample. Figure 27 Schematic of a thin-film moderator in transmission geometry.


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    Phys. Rev. B 34, () - Identification of a defect in a semiconductor: EL2 in GaAs

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    Identification of Defects in Semiconductors, Volume 51A

    Zhang, and S. Issue Vol. Authorization Required. Log In. Figure 1 Formation energies as functions of the supercell size for different charge states. Figure 2 Formation energy of an oxygen vacancy in ZnO under oxygen-poor conditions.

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